Damien Caliste

Damien Caliste

Modélisation et Exploration des Matériaux

Laboratoire de Simulation Atomistique

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Research interests

Ge diffusion in Si

Snapshot of the movement of a Ge atom in a dumbbell interstitial position in silicon crystal. This movement includes an hexagonal interstital position as an on-the-way stable configuration. The evolution of the energy is plotted in the left-bottom box.

Short CV

Publications scientifiques

Selected papers:

Thesis manuscript: Multi-scale simulations of defects diffusion in Si and SiGe semiconductors written in French.

 

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