05 février 2018
This study discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration.
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22 août 2017
Jean-Pierre Nozières, Spintec researcher in magnetic devices, is one of the winners of the Innovation Medal of the CNRS “cuvee” 2017 at 54 years old.
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17 juillet 2017
Contact : Mair CHSHIEV
Advancing spintronic devices requires using novel 2D materials including graphene with featured properties. In particular, a significant effort has been focused on injecting spins and inducing magnetism in graphene giving rise to emerging field of graphene spintronics.
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23 juin 2015
Contact : Mair Chshiev
Abstract The interfacial structures between magnetic/non-magnetic films play a crucial rule in spintronic devices. In particular, Tunneling magneto-resistance (TMR) is extremely sensitive to the band structure of ferromagnet/insulator interfaces.
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09 octobre 2013
Contact : Léa Cuchet
Généralement, les jonctions tunnel magnétiques se composent d’électrodes en alliage de cobalt, fer et bore (CoFeB) et d’une barrière en oxyde de magnésium (MgO).
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04 novembre 2012
Contact : Gilles Gaudin
We developed at the PTA a new 3D magnetometer concept, fully integrated, more compact, more accurate and more efficient than current solutions. We fabricated a first generation prototype.
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02 octobre 2011
Contact: Gilles Gaudin
Spintec researchers, in collaboration with the Catalan Institute of Nanotechnology and the Autonomous University of Barcelona have developed a new technique to write information in a magnetic memory cell in a more stable manner and at a lower energy cost.
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02 avril 2011
Contact: Éric Gautier
At Spintec, in collaboration with the Laboratory of Advanced Microscopy of SP2M, we have developed a sample preparation technique for electron holography imaging.
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05 décembre 2010
Contact: Vincent Baltz
The interaction between ferromagnetic and anti-ferromagnetic materials is known as exchange anisotropy, and it constitutes one of the foundations of spin electronic devices such as hard disk read reads, magnetic random access memories, and magnetic oscillators for use in telecom devices.
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05 novembre 2010
Spintec has discovered and patented a new technology to fabricate spintronic oscillators, which have high purity radiofrequency emissions several hundred times more powerful than that of traditional oscillators.
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20 octobre 2010
Contact : Michael Quinsat
In collaboration with LETI and Hitachi, Spintec has recently developed a technique to extract the non-linear parameters characteristic of the frequency line width of spintronic oscillators.
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12 septembre 2010
Contact : Jérôme Moritz – SPINTEC
Spintec proposes a method to greatly increase the data storage density in hard disk drives. The potential of this technique has been demonstrated experimentally.   The ever-increasing need for computing power also implies an increase of the data volume being used and stored.
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01 février 2010
Accurate experimental measurements have confirmed theoretical predictions made at Spintec concerning spin transfer torque in magnetic tunnel junctions. This effect lies at the heart of future spintronic applications.
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20 septembre 2009
Spintronics created magnetic memories and radio-frequency oscillators based on similar stacks of magnetic and non-magnetic layers.
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01 mai 2009
Contact : Dimitri Houssamedine
With original measurements on high quality samples, Spintec laboratory, in collaboration with Leti and Hitachi, has just revealed one of the reasons why the performance of radio frequency spin oscillators still remains limited.
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15 mars 2009
Contact: Gilles Gaudin
In Hard disk drives and magnetic memories, information is stored in a magnetic domain, associating magnetization direction to logic 1 and 0, up or down direction, which is written using a magnetic field.
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