The lab is equiped with CVD (Chemical Vapor Depositon) low pressure reactor working at high temperature under reductive atmosphere (H2). This machine is exclusively dedicated to the growth of Silicon, Germanium or Si/Ge nanostructure, like nanowires or nanotrees with n or p doping (PH3 or B2H6 respectively). The experimental knowledge acquired at the lab allows an extremely fine tuning of the desired morphologies and conductivity of the structures. The combination of this state of the art equipment with unmatched knowledge on CVD growth means the lab is in the vanguard of the world research on Si, Ge and Si/Ge Nanostructures. Moreover, this equipment matches the highest security and reproducibility standards. This equipment is operated in collaboration with CNRS/LTM
Permanent Staff:
Pascal Gentile, CEA/INAC/SP2M/SiNaPS
Thierry Baron, CNRS/LTM
Non-permanent staff:
2013-2016: Dorian Gaboriau, Kevin Guilloy PhD Students
2012-2015: Virginie Brouzet, PhD Student
2011-2014: Priyanka PERIWAL, PhD Student
2010-2013: Ludovic DUPRE, PhD Student
2007-2010: Fabrice Oehler, PhD Student
Maj : 19/10/2016 (1198)
• Croissance Cristaline › Synthèse de semi-conducteurs Crystalline growth
• Institute for Nanoscience and Cryogenics • PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS) • Quantum Photonics, Electronics and Engineering (PHELIQS)