The lab is equiped with CVD (Chemical Vapor Depositon) low pressure reactor working at high temperature under reductive atmosphere (H2). This machine is exclusively dedicated to the growth of Silicon, Germanium or Si/Ge nanostructure, like nanowires or nanotrees with n or p doping (PH3 or B2H6 respectively). The experimental knowledge acquired at the lab allows an extremely fine tuning of the desired morphologies and conductivity of the structures. The combination of this state of the art equipment with unmatched knowledge on CVD growth means the lab is in the vanguard of the world research on Si, Ge and Si/Ge Nanostructures. Moreover, this equipment matches the highest security and reproducibility standards. This equipment is operated in collaboration with CNRS/LTM