Blocage de Coulomb dans des nanofils silicium
Coulomb blockade in silicon nanowires

We have developped a simple and highly reproducible single electron transistor (SET) using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor (MOSFET) made on silicon-on-insulator thin films within the CMOS platform of CEA-LETI in Grenoble.

The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Indeed doping modulation is achieved by using the gate and spacers as a mask for subsequent ion implantation of the access (source, drain) regions. Such barriers are fixed and controlled, like in metallic SETs. This scheme gives very regular oscillations and very low background charge noise.

 

Top: Drain-Source conductance at low temperature showing periodic Coulomb oscillations determined by the size of the transistor gate.
Bottom: some Coulomb diamonds at 1K

M. Pierre, B. Roche, R. Wacquez, X. Jehl, M. Sanquer, and M. Vinet,

Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire,

  J. Applied Phys. 109, 084346 (2011)

M. Pierre, R. Wacquez, B. Roche, X. Jehl, M. Sanquer, M. Vinet, E. Prati, M. Belli and M. Fanciulli,

Compact silicon double and triple dots realized with only two gates 

APL 95, 242107 (2009)

M. Hofheinz, X. Jehl, M. Sanquer, R. Cerutti, A. Cros, P. Coronel, H. Brut and T. Skotnicki,
Measurement of capacitances in multi-gate transistors by Coulomb blockade spectroscopy,
IEEE trans. on Nanotechnology 7, 74-78 (2008).

M. Hofheinz, X. Jehl, M. Sanquer, G. Molas, M. Vinet and S. Deleonibus,
Capacitance enhancement in Coulomb blockade tunnel barriers,
Phys. Rev. B. 75, 235301 (2007).

M. Hofheinz, X. Jehl, M. Sanquer, O. Cueto, G. Molas, M. Vinet and S. Deleonibus,
Capacitance measurement in nanometric silicon devices using Coulomb blockade,
Solid State Electronics 51, 560 (2007).

M. Hofheinz, X. Jehl, M. Sanquer, G. Molas, M. Vinet and S. Deleonibus,
A simple and controlled single electron transistor based on doping modulation in silicon nanowires,

Appl. Phys. Lett. 89, 143504 (2006).

X. Jehl, M. Hofheinz, M. Boehm, M. Sanquer, G. Molas, M. Vinet and S. Deleonibus,
Peak spacing statistics in silicon single-electron transistors: Size and gate oxide thickness dependence,
PhysicaE 34, 620 (2006).

M. Boehm, M. Hofheinz, X. Jehl, M. Sanquer, M. Vinet, B. Previtali, D. Mariolle and S. Deleonibus
,
Size scaling of the addition spectra in silicon quantum dots,
Phys. Rev. B 71, 033305 (2005).

 

EEATS doctoral course (Marc Sanquer)

 

coursDEA2012MS_english.pdf

 

Maj : 17/10/2013 (205)

 

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