Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design on intrawire and interwire level, which allows for new (opto-)electronic device concepts, such as single-photon nanowire quantum dot emitters. We show recent advances on inducing periodicity on both intra- and interwire level, such to obtain 3 dimensional position control.
We control the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanowires by impurity dopants. More importantly, we demonstrate that we can, once we have enforced the zinc blende crystal structure, induce twinning superlattices with long-range order in the z-direction in the nanowires. The spacing of the superlattices is tuned by the wire diameter and the zinc dopant concentration. These findings have been quantitatively modelled based on the cross-sectional shape of the zinc-blende nanowires. Finally, we transfer the predefined defect structure from a core to a shell material.