Epitaxial Semiconductor – Superconductor Hybrid Nanowires for Topological Superconductivity
Peter Krogstrup
Center of Quantum Devices, Niels Bohr Institute, University of Copenhagen
Mardi 26/01/2016, 15h00-16h00
Bât. K, Salle R. Lemaire (K223), Institut Néel

Semiconductor-metal interfaces are key elements in nanostructured electronics and device architectures. This is in particular true in the field of low dimensional topological superconductivity, where semiconductor nanowires with high spin orbit coupling coupled to a superconducting phase constitute some of the most promising candidates in the search for materials suitable for quantum information technology[i]. I will discuss a new approach to grow well defined hybrid materials[ii] that overcome some of the most important concerns in the field, such as obtaining a superconducting hard gap proximitized in the semiconductor. Using molecular beam epitaxy, we realize epitaxial growth of InAs//Al and InSb//Al based nanowire heterostructures, which we show can form highly ordered interfacial domain match, giving epitaxial and coherent interfaces throughout the NWs, with a minimum amount of defects or impurities. The resulting low density of states in the induced superconducting gap opens for new application possibilities in the field. I will present on the synthesis of various types of hybrid semi-super materials and discuss the challenges and material requirements needed for realizing and eventually manipulating topological protected quantum states.

[i] Nayak et al. Rev. Mod. Phys. 80, 1083 (2008)

[ii] Krogstrup et al. Nature Mater. 14, 400-406 (2015)

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Contact : Michel BENINI


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