From CMOS transistors to CMOS spin qubits
Mardi 14/03/2017, 14:00-15:00
Bât. K, Salle R. Lemaire (K223), Institut Néel

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Classical digital electronics relies on CMOS transistors. An optimal (speed-power trade off) inverter mobilizes approximately 5,000 carriers charging a capacitance (gate and parasitic interconnect) of typically 10-15F around 0,5V.

It is possible to make the transistor working in the single carrier regime at low temperature [1] ( even at 300K at the cost of a large process variability, however [2]) by a slight modification of the CMOS design ( underlapped geometry).

This permits to fabricate a CMOS spin qubit which inherits the figures-of-merit of one of the most advanced CMOS device : the FDSOI nanowire CMOS. Other elements needed to control and read the qubit can also be done within the same technology.

I will show the advantages offered by this technology in the perspective of doing quantum dots and spin quantum bits. I will present briefly the properties of our full-electrical hole CMOS spin qubit [3] and our ideas to realize a full-electrical electron CMOS spin qubit [4].


1 M. Hofheinz et al. APL 89, 143504 (2006)

2 R. Lavieville et al. Nano Lett., 15, 2958 (2015)

3 R. Maurand et al. Nature Comm. 7, 13575 (2016)

4 A. Corna et al. in preparation

Contact : Michel BENINI


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