Rectification of current in metal/insulator nano-structures
Lundi 27/11/2006, 14h00
Bât. 1005 P.434D, CEA-Grenoble
The scanning tunneling microscope (STM) is a powerful tool for imaging nanostructures. STM allows for in-situ transport and magnetic measurements, providing a great deal of information on the electrical and magnetic properties on the nanoscale . A good understanding of the magneto-transport properties of nanostructures is vital for further development of spintronics devices . Here the STM is used to demonstrate high current rectification in magnetic double tunnel junction (MDTJ) [3, 4] following the theoretical prediction . Based on this demonstration we study MDTJ’s fabricated by ebeam lithography and measured using the point contact technique . We observe asymmetric conductance combined with high magnetoresitance in these devices. Such a magnetic diode is important for technologies where integration of magnetic and logic properties into the same metal/oxide stack can lead to more dense designs of magnetic random access memory .
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