Rectification of current in metal/insulator nano-structures
Lundi 27/11/2006, 14h00
Bât. 1005 P.434D, CEA-Grenoble
The scanning tunneling microscope (STM) is a powerful tool for imaging nanostructures. STM allows for in-situ transport and magnetic measurements, providing a great deal of information on the electrical and magnetic properties on the nanoscale [1]. A good understanding of the magneto-transport properties of nanostructures is vital for further development of spintronics devices [2]. Here the STM is used to demonstrate high current rectification in magnetic double tunnel junction (MDTJ) [3, 4] following the theoretical prediction [5]. Based on this demonstration we study MDTJ’s fabricated by ebeam lithography and measured using the point contact technique [6]. We observe asymmetric conductance combined with high magnetoresitance in these devices. Such a magnetic diode is important for technologies where integration of magnetic and logic properties into the same metal/oxide stack can lead to more dense designs of magnetic random access memory [2]. 1) O. Pietzsch, A. Kubetzka, M. Bode, and R. Wiesendanger, Science 292, 2053 (2001). 2) S. S. P. Parkin, K. P. Roche, M. G. Samant, P. M. Rice, R. B. Beyers, R. E. Scheuerlein, E. J. O'Sullivan, S. L. Brown, J. Bucchigano, D. W. Abraham, Yu. Lu, M. Rooks, P. L. Trouilloud, R. A. Wanner, and W. J. Gallagher, J. Appl. Phys. 85, 5828 (1999). 3) A. Iovan, D. B. Haviland and V. Korenivski, Appl. Phys. Lett. 88, 163503 (2006). 4) A. Iovan, K. Lam, S. Andersson, S. S. Cherepov, D. B. Haviland, and V. Korenivski, submitted IEEE (2006). 5) M. Chshiev, D. Stoeffler, A. Vedyayev, and K. Ounadjela, Europhys. Lett. 58, 257 (2002). 6) Yu. G. Naidyuk and I.K. Yanson. Point-contact spectroscopy, volume 145. Springer Science + Business. Media Inc., (2005).


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