Service de PHotonique ELectronique et Ingénierie QuantiqueS (PHELIQS)

Laboratory for Quantum Electronic Transport and superconductivity (LaTEQS)



Directeur de recherche CEA


Sujets de recherche

mesoscopic quantum transport, semiconducting nanodevices, hybrid superconducting-normal metal junctions,

Coulomb blockade, quantum interference effect in diffusive and localized regimes.

Single dopant and single electron effects in silicon nanostructures, CMOS qubit



1985: PhD in Physics (Université Paris-Sud Orsay) "Electronic transport and magnetism in irradiated organic conductors"

1985-1996: Researcher at the CEA-Saclay (IRAMIS-SPEC)

1996-today: Researcher at the CEA-Grenoble (INAC-PHELIQS)

HDR UJF (1997)

2010-2015 Director of the "Condensed Matter and Nanoscience" Federation   UJF-CNRS-CEA (FR–CNRS 2601)

2008-2011 Coordinator of the European "AFSiD "project

2009-2011  Representative of Research staff at the "Nanosciences  Foundation"

2013-2016 Coordinator of the European "SiSPIN "project

2016- Representative of Research staff at the CAc -COMUE-UGA

selected publications:

Thomas Dubouchet, Benjamin Sacépé, Johanna Seidemann,Dan Shahar, Marc Sanquer,and Claude Chapelier  Collective energy gap of preformed Cooper-pairs in disordered superconductors , Nature Physics Decembre 2018 arXiv:1806.0032


V. Mazzocchi, P. G. Sennikov, A. D. Bulanov, M. F. Churbanov, B. Bertrand, L. Hutin, J. P. Barnes, M. N. Drozdov,J. M. Hartmann, and M. Sanquer, 99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits, arXiv1807.04968  J. Cryst. Growth. 2018

M. Seo, P. Roulleau, P. Roche, D.C. Glattli, M. Sanquer, X. Jehl, L. Hutin, S. Barraud and F.D. Parmentier, Strongly correlated charge transport in silicon MOSFET quantum dots Phys. Rev. Lett. 121, 027701 (2018)  DOI:

R. Maurand, X. Jehl, D. Kotekar Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi A CMOS silicon spin qubit, arXiv:1605.07599 Nature Communications 7, Article number: 13575 (2016) doi:10.1038/ncomms1357

B. Voisin, R. Maurand, S. Barraud, M. Vinet,X. Jehl, M.Sanquer, J.Renard, and S. De Franceschi Electrical control of the first hole spin in a silicon nanowire MOSFET, Nanoletters 2015 DOI: 10.1021/acs.nanolett.5b02920

P. Clapera, S. Ray, X. Jehl, M. Sanquer, A. Valentian, and S. Barraud, Co-integrated Voltage Controlled oscillators and a MOS-Single Electron transistor, Phys. Rev. Applied 4, 044009 (2015).

A. C. Betz, R. Wacquez, M. Vinet, X. Jehl A. L. Saraiva, M. Sanquer, A. J. Ferguson and M. F. Gonzalez – Zalba, “Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor”,  Nano Lett., 2015, 15 (7), pp 4622–4627

R. Lavieville, F. Triozon, S. Barraud, A. Corna, X. Jehl, M. Sanquer, J. Li, A. Abisset, I. Duchemin, and Y.-M. Niquet, "Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.” Nano Lett., 2015, 15 (5), pp 2958–2964

B. Brun, F. Martins, S. Faniel, B. Hackens, A. Cavanna, C. Ulysse, A. Ouerghi, U. Gennser, D. Mailly, S. Huant, V. Bayot, M. Sanquer, H. Sellier “Wigner and Kondo physics in Quantum Point Contacts revealed by Scanning Gate Microscopy”  arXiv:1307.8328  Nature Communications 5, Article number: 4290 (Juin 2014)

Benoit Voisin, Viet Nguyen, Julien Renard, Xavier Jehl, Sylvain Barraud,François Triozon, Maud Vinet, Yvan Duchemin, Yann-Michel Niquet, Silvano De Franceschi, Marc Sanquer, « Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor » Nanoletters March 2014

X. Jehl, B. Voisin, T. Charron, P. Clapera, S. Ray, B. Roche,M. Sanquer, S. Djordjevic, L. Devoille, R. Wacquez and M. Vinet  «  A hybrid metal/semiconductor electron pump for practical realization of a quantum ampere » PHYSICAL REVIEW X 3, 021012 (2013)

E. Dupont-Ferrier et al. “Coherent coupling of two dopants in a silicon nanowire probed by Landau-Zener-Stückelberg interferometry » PRL 110, 136802 (2013)

B. Roche, R.-P. Riwar, B. Voisin, E. Dupont-Ferrier, R. Wacquez, M. Vinet, M. Sanquer, J. Splettstoesser and X. Jehl,  « A two-atom electron pump » Nature Communications 4, 1581 (2013)

B. Roche, E. Dupont-Ferrier, B. Voisin, M. Cobian, X. Jehl, R. Wacquez, M. Vinet, Y.-M. Niquet, and M. Sanquer « Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy”  Phys. Rev. Lett. 108, 206812 (2012).

B. Roche, B. Voisin, X. Jehl, R. Wacquez, M. Sanquer,  M. Vinet, V. Deshpande, B. Previtali, A tunable, dual mode field-effect or single electron transistor, Appl. Phys. Lett. 100, 032107 (2012)

B. J. Villis, A. O. Orlov, X. Jehl, G. L. Snider, P. Fay, and M. Sanquer “Defect detection in nano-scale transistors based on radio-frequency reflectometry” APPLIED PHYSICS LETTERS 99, 152106 (2011)

V. N. Golovach, X. Jehl, M. Houzet,M. Pierre, B. Roche, M. Sanquer, and L. I. Glazman “Single-dopant resonance in a single-electron transistor”,  PHYSICAL REVIEW B 83, 075401 (2011)

Hubert C. George,  Mathieu Pierre, Xavier Jehl, Alexei O. Orlov, Marc Sanquer, and Gregory L. Snider  “Application of negative differential conductance in Al/AlOx single-electron transistors for background charge characterization” APL  96, 042114 (2010)

M. Pierre , R. Wacquez, X. Jehl, and M. Sanquer,  Vinet and O. Cueto “Single donor ionization energies in a nanoscale CMOS channel” Nature Nanotechnology 5, 133 - 137 (2010)

M. Pierre, R. Wacquez, B. Roche, X. Jehl, M. Sanquer, M. Vinet, E. Prati, M. Belli and M. Fanciulli, « Compact silicon double and triple dots realized with only two gates » APL 95, 242107 (2009)

M. Pierre, M. Hofheinz, X. Jehl, M. Sanquer, G. Molas, M. Vinet, S. Deleonibus, “Background charges and quantum effects in quantum dots transport spectroscopy” European Physical Journal B 70, 475 (2009)

B. Sacépé, C. Chapelier, T. I. Baturina, V. M. Vinokur, M. R. Baklanov, and M. Sanquer, “order-Induced Inhomogeneities of the Superconducting State close to the Superconductor-Insulator Transition” Phys. Rev. Lett.  101, 157006 (2008)

E. Lhotel, O. Coupiac, F. Lefloch, H. Courtois and M. Sanquer, “Divergence at Low Bias and Down-Mixing of the Current Noise in a Diffusive-Superconductor–Normal-Metal–Superconductor Junction » Phys. Rev. Letters 99, 117002 (2007).

Y. Luo, F. Gustavo, Y Henry, F. Mathevet, F. Lefloch, M. Sanquer, F. Rannou and B. Grévin,“Probing Local Electronic Transport at the Organic Single Crystal/Dielectric Interface” Advanced Materials, 2007.

M. Hofheinz,_X. Jehl, and M. Sanquer G. Molas, M. Vinet, and S. Deleonibus “capacitance enhancement in Coulomb blockade tunnel barriers”, Phys. Rev. B 75, 235301 (2007).

M. Hofheinz, X. Jehl, and M. Sanquer G. Molas, M. Vinet, and S. Deleonibus “Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy” European Physical Journal B54, 299, (2006)

M. Hofheinz, X. Jehl , M. Sanquer , G. Molas, M. Vinet and S. Deleonibus , “A simple and controlled single electron transistor based on doping modulation in silicon nanowires”, Applied Physics Letters vol.89, 143504 (2006).

M. Boehm, M. Hofheinz, X. Jehl, M. Sanquer, M. Vinet, B. Previtali, D. Fraboulet, D. Mariolle, S. Deleonibus “Size scaling of the addition spectra in silicon quantum dots” Phys. Rev. B 71, 033305 (2005).

N. Hadacek, M. Sanquer and J-C. Villégier “Doubled re-entrant superconducting-insulator transition in thin TiN films” , Phys. Rev. B69, 024505 (2004).

F. Lefloch, C. Hoffmann, M. Sanquer and D. Quirion, “Doubled full shot noise in quantum coherent Superconductor-semiconductor junction” , Phys. Rev. Lett. 90, 067002 (2003).

F. Boeuf, T. Skotnicki, X . Jehl and M. Sanquer “Controlled single-electron effects in nonoverlapped ultra short silicon field effect transistor”, IEEE transactions on Nanotechnology, vol2, No3, p144 (2003).

M. Specht, M. Sanquer , S. Deleonibus and G. Guégan “Signature of Kondo effect in silicon Quantum dots” , European Physical Journal B 26, 503 (2002).

D . Quirion, C. Hoffmann, F. Lefloch and M Sanquer “Mesoscopic proximity effect in double-barrier superconductor/normal metal”, Phys. Rev. B 65, 100508 (R ) (2002).

X. Jehl and M. Sanquer « Shot noise measurements in NS junctions and the semiclassical theory » Phys. Rev. B 63, 52511 (2001)

M. Sanquer, M Specht, L. Ghenim, S. Deleonibus and G. Guégan « Coulomb blockade and transport spectroscopy in short Si :MOSFET » , Phys. Rev. B 61, 7269 (2000).

X. Jehl, M. Sanquer, R. Calemczuk and D. Mailly « Detection of doubled shot noise in short NS junctions » Nature 405, 50 (2000).

X. Jehl, P. Payet-Burin, C. Baraduc, R. Calemczuk and M. Sanquer « Andreev reflection enhanced shot noise in mesoscopic SNS junctions » , Phys. Rev. Lett. 83, 1660 (1999).

W. Poirier, D. Mailly and M. Sanquer, « Tunneling and interferences in very small GaAs MESFET » Phys. Rev. B59, 10856 (1999).

D. Mailly and M. Sanquer, “Sensitivity of quantum conductance fluctuations and of 1/f noise to time reversal symmetry” J Phys. 1, France 357 (1992).

JL Pichard, M. Sanquer, K. Slevin and P. Debray, “Broken symmetries and Localization Lengths in Anderson insulators: Theory and Experiment” Phys. Rev. Lett. 65, 1812 (1990).

JL Pichard and M. Sanquer,”Quantum conductance fluctuations and maximum entropy ensembles for the transfer matrix” Physica A167, 66 (1990).

M. Sanquer, R. Tourbot and B. Boucher, « correlation between High and Low temperature conductivities in high resistive disordered metals » Europhysics Lett. 7, 635 (1988).


Course "Future trends in Microelectronics: new concepts, new devices" Ecole doctorale UJF-INPG  EEATS











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