February 2017

22-02-2017
Contact : Mathieu Jamet
We have fabricated large-scale two-dimensional transition metal dichalcogenide (2D TMD) MoSe2, a promising candidate for electronics, valley-spintronics and optoelectronics, on insulating sapphire and have investigated its structural and transport properties. We have shown that the layered MoSe2 ... More »
07-02-2017
Contact : Matthieu Jamet
We have demonstrated the spin-to-charge interconversion by Rashba coupling at the interface between two light materials: iron and germanium which is compatible with today’s CMOS technology. This result constitutes the first step towards the fabrication of a spin transistor based on the ... More »

January 2017

05-01-2017
Contact : Bernard Dieny
Magnetic field mapping techniques have continuously been developed due to the necessity for determining the spatial components of local magnetic fields in many industrial applications and fundamental research. Several factors are considered for sensors such as spatial resolution, sensitivity, ... More »
 

 

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