Contact : Joël Emery
The properties of hard X-ray to excite light emission can be combined simultaneously with X-ray fluorescence techniques to study nanoscale devices as demonstrated for multiple quantum well (MQW) InGaN/GaN core/shell wires integrated in blue LED emitters. This study allowed us to understand the ... More »
Contact : Julien CLAUDON
It has been shown in recent years that mechanical stress can be used to tune the electronic and optical properties of semiconductor quantum dots. For instance, this approach has been implemented to adjust finely the emission wavelength of quantum dot single photon sources. In view of real ... More »
Contact : Damien Massy
Damien Massy, SP2M/NRS, received the best presentation award at the E-MRS Fall meeting 2015 for his paper called “Alternative Smart-Cut integration on silicon”. The paper was about Damien’s PhD work, on Acoustic Emission from Crack Propagation in the Smart Cut™ Technology.
Self-organized nanoclusters in a thin film elaborated by sol-gel, this is possible ! The nanocluster organization is closely related to the pore arrangement in the annealed films. This discovery of scientists from INAC/SP2M, LITEN and University Grenoble Alpes still widens the applications ... More »
The use of strained silicon is a fundamental of modern nano-electronics, allowing to increase the mobility of charge carriers up to 150%. Researchers from INAC (in collaboration with LETI and ESRF) measured the deformation of individual silicon lines at the nanoscale. With the miniaturization of ... More »


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