Contact : Vincent CALVO
V. Calvo and N. Pauc at INAC/PHELIQS/ SiNaPS Light sources fully integrated into microelectronics technology are the missing stones of silicon photonics. Silicon, as well as germanium, are not well suited for light emission in their natural form, due to the indirect nature of their bandgap.
Contact : Florian VIGNEAU
We report ballistic transport in a one-dimensional (1D) channel made of germanium quantum well and reveal an anisotropic variation of the hole g-factor as a function of the orientation of the magnetic field.
Contact : Manon TARDIF
We demonstrate the optical trapping of bacteria in a 2D silicon hollow photonic crystal cavity. This structure allows for the Gram-type differentiation of bacteria in a fast, label-free, and non-destructive way.
Contact : Matthieu JAMET
Composite materials made of a stack of two-dimensional (2D) materials have drawn much attention recently thanks to the possibility to control and engineer their band structure by a proper choice of the individual 2D layers.
The coexistence of ferromagnetism and superconductivity is a rare and surprising phenomenon. Three resent studies carried out in INAC help understand the pairing mechanism is these systems.
Contact : Marc Sanquer
Research on silicon-based spin qubits is currently extensively pursued looking for a viable pathway towards large-scale integration.
Contact : Vincent Renard
Individual stretching of graphene layers in a van der Waals stack drastically modifies the electronic properties of the whole structure. This result opens new possibilities for the strain-engineering of 2D materials.
Contact : Julia Meyer
Researchers from INAC/PHELIQS (CEA Grenoble) established the theory of the critical magnetic field for a novel class of two-dimensional superconductors with strong spin-orbit coupling. These materials have interesting properties for potential applications in spintronics.
Contact : Eva Monroy
Researchers at INAC-PHELIQS-NPSC have developed new approaches for the detection of ultraviolet/infrared light using single GaN nanowires. Results have led to the demonstration of the first photodetector-in-a-wire based on intersubband transitions, i.e.
Contact : David Aradilla
Three different services, SyMMES, MEM and PhELIQS from INAC institute, have been working together during the last year and a half within the framework of a collaborative intern project dealing with nitrogen doped-vertically oriented graphene nanosheets (N-VOGNs) for supercapacitor applications.
Integration of charge sensors for the readout of semiconductor quantum bits (qubits) is required for a realistic realization of scalable quantum computer.
In the context of the study of the interplay between magnetism and superconductivity, a phase transition has been evidenced as a function of magnetic field between two phases having identical magnetic symmetry.
Contact : Julien Claudon
Researchers have succeeded in coupling a semiconductor quantum dot to a vibrating wire. The quantum dot is then able to detect the mechanical vibrations of the wire with very high sensitivity.
The development of sensitive and compact readout tools of quantum states is a central issue in the run to industrial scalability of semiconductor quantum bits (qubits).
Several groups have already reported the fabrication of nanotubes, but such structures exhibit usually poor light emission performances. Indeed, the surface states and defects favor the non-radiative recombination processes that quench light emission.
Contact : Julien Claudon
A new class of optoelectronic devices, such as single-photon sources, is based on semiconductor quantum dots (QDs) embedded in a photonic structure. Nowadays, the best QDs are still obtained via a self-assembly process: these emitters are thus randomly located in the structure.
In a metal the energy levels of the electrons, which have to be all in different quantum states due to the Pauli exclusion principle, are filled up to the Fermi energy at zero temperature.
Combined extreme conditions of high pressure and strong magnetic field are an extremely powerful tool to tune microscopic interactions in order to attain and study new states of matter.
Moiré patterns are superlattice structures that appear when two crystals with a lattice mismatch or with a different orientation are superimposed. We have developed a universal classification of all possible periodic Moirés in order to determine their exact crystallographic structure.
Contact : Manon Tardif
We demonstrate the optical trapping of living objects with an integrated SOI microcavity and the discrimination of three different types of bacteria based on the analysis of the trapped bacterium interactions with the electromagnetic field of the cavity.
Leti and Inac received EARTO 2016 Innovation Awards for their new 3D LED. Offering a better price/performance ratio, this new technology will be commercialized by Aledia - a Leti spin-off.
Leti, an institute of CEA Tech, along with Inac, a fundamental research division of CEA, and the University of Grenoble Alpes have achieved the first demonstration of a quantum-dot-based spin qubit using an industry-standard fabrication process.
Contact : Julien CLAUDON
It has been shown in recent years that mechanical stress can be used to tune the electronic and optical properties of semiconductor quantum dots. For instance, this approach has been implemented to adjust finely the emission wavelength of quantum dot single photon sources.
The Léon Brillouin Great Prize has been founded by the French Optical Society, with the support of the iXCore Research Foundation, to honor the memory of the great physicist Léon Brillouin, whose discoveries have deeply influenced the modern development of Optics.
Researchers from INAC/PHELIQS (CEA Grenoble) and Kavli Institute of Nanoscience (TU Delft, Netherlands) have predicted the occurrence of topological transitions in multi-terminal Josephson junctions.
Contact : Bruno Gayral
We have studied the growth and optical properties of AlGaN nanowires, a potential candidate for future ultraviolet light sources. We have evidenced that such structures behave as a collection of quantum dots due to short-scale composition fluctuations.
Contact : Romain Maurand
microelectronics industry has shrinked the size of transistors present in our computers and other electronic equipment, arriving to critical sizes on the order of ten nanometers.
Contact : Emmanuel PICARD
The distribution of the electromagnetic field is an essential input for the design and development of new photonic structures. The classical near-field microscopy tools (SNOM, PSTM ..) allow to obtain this information experimentally.
Researchers from CNRS, CEA, Paris-Sud University and Joseph Fourier University have developed a new process for producing light emitting diodes (LED) flexible.
Contact : Vincent Calvo
Light sources fully integrated into microelectronics technology are the missing stones of silicon photonics. Silicon, as well as germanium, are not well suited for light emission in their natural form, due to the indirect nature of their bandgap.


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