Spintronics and Technology of Components (SPINTEC)

SPINTEC is a Research Laboratory which goal is to bridge fundamental research and advanced technology towards new paradigms / devices in the emerging field of spin electronics.

Spintec web site: www.spintec.fr

Last indexed articles

 

Last update : 02/20 2017 (466)

Themes
Highlights
22-08-2017
Jean-Pierre Nozières, Spintec researcher in magnetic devices, is one of the winners of the Innovation Medal of the CNRS “cuvee” 2017 at 54 years old. Since 2011, this distinction has been awarded for outstanding scientific research leading to a remarkable innovation, whether in ... More »
21-07-2017
Contact : Matthieu Jamet
Germanium is one of the most appealing candidate for spintronic applications, thanks to its compatibility with the Si platform, the long electron spin lifetime and the optical properties matching the conventional telecommunication window. Electrical spin injection schemes have always been exploited ... More »
17-07-2017
Contact : Mair CHSHIEV
Advancing spintronic devices requires using novel 2D materials including graphene with featured properties. In particular, a significant effort has been focused on injecting spins and inducing magnetism in graphene giving rise to emerging field of graphene spintronics. It is demonstrated that ... More »
23-05-2017
  We have developed arrays of innovative magnetic nanotweezers or “nanojaws” on silicon wafers, by a top-down approach using the fabrication techniques of microelectronics.   The mechanical manipulation of micro- and nanometric objects relies on constantly evolving ... More »
03-05-2017
Contact : Gilles Gaudin
We have created an analytical model of spin waves in microscopic spin-wave waveguides in the presence of interfacial Dzyaloshinskii-Moriya interaction. By comparing to micromagnetic simulations, we have demonstrated that spatially periodic excitation sources can be used to create a uni-directional ... More »
22-02-2017
Contact : Mathieu Jamet
We have fabricated large-scale two-dimensional transition metal dichalcogenide (2D TMD) MoSe2, a promising candidate for electronics, valley-spintronics and optoelectronics, on insulating sapphire and have investigated its structural and transport properties. We have shown that the layered MoSe2 ... More »
07-02-2017
Contact : Matthieu Jamet
We have demonstrated the spin-to-charge interconversion by Rashba coupling at the interface between two light materials: iron and germanium which is compatible with today’s CMOS technology. This result constitutes the first step towards the fabrication of a spin transistor based on the ... More »
05-01-2017
Contact : Bernard Dieny
Magnetic field mapping techniques have continuously been developed due to the necessity for determining the spatial components of local magnetic fields in many industrial applications and fundamental research. Several factors are considered for sensors such as spatial resolution, sensitivity, ... More »
25-10-2016
Contact : Bernard Dieny
The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost ... More »
06-10-2016
Contact : Olivier Klein
Magnonic is an emerging research field, which aims at exploiting pure spin transport in magnetic materials. The elementary excitations are the propagating spin-waves, also called magnon, which are bosonic quasiparticles. The advantages over conventional electronic devices are a significant ... More »
27-09-2016
Contact : Laurent Vila
At the interface between the strontium titanate and the lanthanide aluminate forms a 2 dimensional electron system. By using a dynamical spin injection technique, we were able to demonstrate a record conversion yield between spin and charge current in this system, moreover that is tunable in ... More »
04-07-2016
Contact : Olivier Boulle
These nanoscale magnetic textures have been observed at room temperature in materials compatible with the microelectronics industry by  O. Boulle and his colleagues from Spintec in Grenoble. These results break an important barrier for the use of skyrmions as nanoscale information carrier in ... More »
01-05-2016
Contact : Laurent Vila
A CoFe based ferromagnetic alloy has been used in lateral spin valves to replace NiFe alloys, which are overwhelmingly exploited as ferromagnets electrodes in lateral spintronic devices. By using this second material, emitted signals are found to be one order of magnitude larger. In addition to ... More »
23-03-2016
Contact : Vincent Baltz
A fluctuating magnetic order allows more spins to pass through an interface. Bringing a ferromagnetic layer to resonance creates non-equilibrium magnetization dynamics which generates a spin current. The spin current propagates from the ferromagnet into a neighboring layer if permitted by the ... More »
04-02-2016
Contact: Ursula EBELS
Spintronic concepts and materials are well known for their applications in data storage, magnetic memory and hybrid logic devices. Besides, they can also bring novel approaches for the realization of microwave components such as rf signal sources or rf detectors. These applications are based on the ... More »
30-11-2015
Magnetic devices made from the same thin film and subjected to the same electric excitation switch opposite to each other due to their different shape. The magic about the art of paper folding is that from the same sheet of paper one can create so many different objects. Unfortunately, the ... More »
29-10-2015
Contact : Helene JOISTEN
A recent approach for cancer cells destruction was proposed, based on the triggering of cancer cell spontaneous death through the mechanical vibration of anisotropic magnetic nanoparticles attached to the cells membrane at low frequencies (20Hz) and in weak magnetic fields ( a few mT). The ... More »
29-10-2015
Contact : Ricardo Sousa
During writing of Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM), the torque due to a voltage pulse may be used to help writing. As part of collaboration between Spintec and Crocus Technology, we brought out that most of the influence of the spin transfer torque is exerted ... More »
29-10-2015
Contact : Bernard DIENY
Thematic Prize 2015 Adrien Constantin de Magny awarded to Bernard DIENY by the French Sciences Academy Bernard Dieny from INAC/SPINTEC received the thematic Prize « Adrien Constantin de Magny » for his research in nanomagnetism and spin-electronics. His research results ... More »
23-06-2015
Contact : Mair Chshiev
Abstract The interfacial structures between magnetic/non-magnetic films play a crucial rule in spintronic devices. In particular, Tunneling magneto-resistance (TMR) is extremely sensitive to the band structure of ferromagnet/insulator interfaces.  In this sense, a number of experimental and ... More »
22-04-2015
One solution to meet the new microelectronics and very advanced processes issues is to use Magnetic Tunnel Junctions (MTJ), adding mainly the non-volatility to the integrated circuits. This enables to improve the performance, especially in terms of power consumption and new ... More »
22-04-2015
The maximization of Hex/HC ratio (Hex being the exchange bias field and HC the coercive field) and Hex thermal stability are key aspects to improve the performances of Thermally Assisted Magnetic Random Access Memory (TA-MRAM). These properties can be enhanced on a IrMn/Co based exchange biased ... More »
05-11-2014
Contact : Claire Baraduc
  Researchers from Spintec wrote the first chapter of a book about magnetoresistive sensors. This book that collects all available knowledge on this subject was awarded a Distinguished Publication Award by the Magnetics Society of Japan. Since the discovery of the giant ... More »
04-11-2014
Contact : Vincent Baltz
In spintronics, the spin dependent transport properties of ferromagnets (Fs) lie at the heart of devices working principles. Conversely, antiferromagnets (AFs) are so far used for their magnetic properties only. However, spin dependent transport with AFs is of high interest: spin absorption lengths ... More »
29-09-2014
Contact : Ricardo SOUSA
In order to enhance the tunnel magnetoresistance (TMR) of magnetic tunnel junctions with perpendicular anisotropy the thicknesses of the electrodes on both sides of the MgO barrier have to be optimized. By carefully adjusting the thicknesses of the magnetic layers, taking into account a ... More »
20-11-2013
Magnetic nanoparticles are more and more used for various biotechnological applications, due to their capability to exert actuation on biological species thanks to magnetic fields applied remotely. A condition for their use in biotechnology is the ability to avoid their agglomeration when dispersed ... More »
09-10-2013
Contact : Vincent Baltz
Spintronics applications use ferromagnetic(F)/antiferromagnetic(AF) exchange bias (EB) interactions to set the reference direction required for the spin of conduction electrons. They therefore may involve layers intermixing originating from F/AF interfaces. As a consequence of intermixing, ... More »
09-10-2013
Contact : Léa Cuchet
Usually, magnetic tunnel junctions consist of electrodes made of an alloy of cobalt, iron and boron (CoFeB) and a tunnel barrier in magnesium oxide (MgO). To bring perpendicular anisotropy to such structures, multilayers of cobalt and platinum (Co/Pt) may be used. However, it is necessary to ... More »
17-07-2013
In May, at the "International Memory Workshop" organized by the IEEE in California, Spintec and Crocus Technology presented the first demonstration of magnetic memory cells capable of performing a logic function. This patented concept opens the possibility to perform functions related to ... More »
29-05-2013
Contact : Ursula Ebels
The topical group “Magnetism and its applications” (GMAG) from the American Physical Society (APS) presents an award to three PhD students every year during the APS March meeting for their outstanding dissertation, highlighting the quality and independence of the student’s ... More »
HAL publications
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Gallery
Giant and tunable spin-charge conversion at oxide interfaces
AN INTEGRATED 3D COMPASS
Spintronics and Technology of Components (SPINTEC)
Of spin super-conduction spin in electric insulators
Of spin super-conduction spin in electric insulators
APS/GMAG PHD Prize for Michael Quinsat
Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface
Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface
Impact of diffusion barriers on the devices magnetic properties dispersions in spintronics
Ta insertions for perpendicular MRAM memories
Ta insertions for perpendicular MRAM memories
Efficient actuation and controlled dispersion of magnetic nanoparticles for biomedical applications
Efficient actuation and controlled dispersion of magnetic nanoparticles for biomedical applications
Optimizing the performances of magnetic tunnel junctions by playing on materials thicknesses
IMAGING THE MAGNETIC FIELD OF MULTILAYER DOTS
IMAGING THE MAGNETIC FIELD OF MULTILAYER DOTS
IMAGING THE MAGNETIC FIELD OF MULTILAYER DOTS
IMAGING THE MAGNETIC FIELD OF MULTILAYER DOTS
BETTER MEMORIES AT LOWER POWER
BETTER MEMORIES AT LOWER POWER
TORQUE : SIMULATION… AND EXPERIMENT
MORE DATA IN HARD DISK DRIVES
MORE DATA IN HARD DISK DRIVES
MORE DATA IN HARD DISK DRIVES
LOWER NOISE IN OSCILLATORS
A SWINGING OSCILLATOR
TWIN PEAKS
TWIN PEAKS
SLIM WAISTLINE FOR THE SPIN OSCILLATOR
SLIM WAISTLINE FOR THE SPIN OSCILLATOR
SPIN COUPLING IN DOMAIN WALLS
SPIN COUPLING IN DOMAIN WALLS
SPIN COUPLING IN DOMAIN WALLS
TURN HALFWAY AND SWITCH
Alain SCHUHL lauréat du prix Yves Rocard de la SFP
Comparison of the use of NiFe and CoFe as electrodes for metallic lateral spin valves
A FEW MAGNETISM FOR LESS POWER HUNGRY PROCESSORS
NANO SPIN DOCTORS
NANO SPIN DOCTORS
NANO SPIN DOCTORS
Spintronics: antiferromagnets take a full part
A book including a contribution from Spintec was awarded by the Magnetics Society of Japan
Compact modeling and use of Magnetic Tunnel Junctions written by Spin Orbit Torque for non-volatile filp-flops targeting high-speed and low-energy applications
Compact modeling and use of Magnetic Tunnel Junctions written by Spin Orbit Torque for non-volatile filp-flops targeting high-speed and low-energy applications
Enhancement of exchange bias properties in (Pt(or Pd)/Co)3/IrMn/Co structures
Enhancement of exchange bias properties in (Pt(or Pd)/Co)3/IrMn/Co structures
Band-Edge Noise Spectroscopy of a Magnetic Tunnel Junction
TRIGGERING THE SPONTANEOUS DEATH OF CANCER CELLS BY THE VIBRATION OF MAGNETIC MICRO/ NANOPARTICLES at 20 Hz
Improving writing properties of TAS-MRAM by changing the voltage pulse shape
Bernard Dieny, prix Adrien Constantin de Magny
Bernard Dieny, prix Adrien Constantin de Magny
Bernard Dieny, prix Adrien Constantin de Magny
Magnetic Origami
Spin torque nano-oscillators: Locking of damped and Spin torque driven modes
Through desorder
Magnetic skyrmions observed at room temperature
Misalign to write faster
Magneto-optical micromechanical systems for magnetic field mapping
Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
Creation of unidirectional spin-wave emitters by utilizing interfacial Dzyaloshinskii-Moriya interaction
Nanotweezers and their remote actuation by magnetic fields
Tailoring magnetic insulator proximity effects in graphene: first-principles calculations
Spin-Hall Voltage over a Large Length Scale in Bulk Germanium
Jean-Pierre Nozières rewarded with the CNRS Innovation Medal 2017

 

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