Contact : Matthieu JAMET
Composite materials made of a stack of two-dimensional (2D) materials have drawn much attention recently thanks to the possibility to control and engineer their band structure by a proper choice of the individual 2D layers.
Contact : Olivier Klein
We have recently reported that pure spin conductors could behave as nonlinear component in the high power regime, hereby opening up considerably the realm of functions realizable with magnetic materials. An additional feature is that these are continuously tunable by an external magnetic field.
Contact : Gilles Gaudin
We report on the wave-vector independent detection of short-waved spin waves with wavelengths down to 150 nm by the inverse spin Hall effect in spin-wave waveguides made from CMOS-compatible sputtered Ta/CoFeB/MgO.
This study discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration.
Magnetic tunnel junctions are the basic elements of a new class of magnetic memory called MRAM (Magnetic Random Access Memory). These are about to enter in volume production at major microelectronics foundries (Samsung, TSMC, Global Foundries…).
Radiation robust circuit design for harsh environments like space is a big challenge for IC design and embedded systems. As circuits become more and more complex and CMOS processes get denser and smaller, their immunity towards particle strikes decreases drastically.
Contact : Hélène Bea
Nanoscale magnetic skyrmions are good candidates for data manipulation and storage in spintronic applications (logic and/or memory). A team from INAC/SPINTEC has recently shown that a gate voltage can nucleate or annihilate skyrmions.
Jean-Pierre Nozières, Spintec researcher in magnetic devices, is one of the winners of the Innovation Medal of the CNRS “cuvee” 2017 at 54 years old.
Contact : Matthieu Jamet
Germanium is one of the most appealing candidate for spintronic applications, thanks to its compatibility with the Si platform, the long electron spin lifetime and the optical properties matching the conventional telecommunication window.
Contact : Mair CHSHIEV
Advancing spintronic devices requires using novel 2D materials including graphene with featured properties. In particular, a significant effort has been focused on injecting spins and inducing magnetism in graphene giving rise to emerging field of graphene spintronics.
  We have developed arrays of innovative magnetic nanotweezers or “nanojaws” on silicon wafers, by a top-down approach using the fabrication techniques of microelectronics.
Contact : Gilles Gaudin
We have created an analytical model of spin waves in microscopic spin-wave waveguides in the presence of interfacial Dzyaloshinskii-Moriya interaction.
Contact : Mathieu Jamet
We have fabricated large-scale two-dimensional transition metal dichalcogenide (2D TMD) MoSe2, a promising candidate for electronics, valley-spintronics and optoelectronics, on insulating sapphire and have investigated its structural and transport properties.
Contact : Matthieu Jamet
We have demonstrated the spin-to-charge interconversion by Rashba coupling at the interface between two light materials: iron and germanium which is compatible with today’s CMOS technology.
Contact : Bernard Dieny
Magnetic field mapping techniques have continuously been developed due to the necessity for determining the spatial components of local magnetic fields in many industrial applications and fundamental research.
Contact : Bernard Dieny
The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization.
Contact : Olivier Klein
Magnonic is an emerging research field, which aims at exploiting pure spin transport in magnetic materials. The elementary excitations are the propagating spin-waves, also called magnon, which are bosonic quasiparticles.
Contact : Laurent Vila
At the interface between the strontium titanate and the lanthanide aluminate forms a 2 dimensional electron system.
Contact : Olivier Boulle
These nanoscale magnetic textures have been observed at room temperature in materials compatible with the microelectronics industry by  O. Boulle and his colleagues from Spintec in Grenoble.
Contact : Laurent Vila
A CoFe based ferromagnetic alloy has been used in lateral spin valves to replace NiFe alloys, which are overwhelmingly exploited as ferromagnets electrodes in lateral spintronic devices. By using this second material, emitted signals are found to be one order of magnitude larger.
Contact : Vincent Baltz
A fluctuating magnetic order allows more spins to pass through an interface. Bringing a ferromagnetic layer to resonance creates non-equilibrium magnetization dynamics which generates a spin current.
Contact: Ursula EBELS
Spintronic concepts and materials are well known for their applications in data storage, magnetic memory and hybrid logic devices. Besides, they can also bring novel approaches for the realization of microwave components such as rf signal sources or rf detectors.
Magnetic devices made from the same thin film and subjected to the same electric excitation switch opposite to each other due to their different shape. The magic about the art of paper folding is that from the same sheet of paper one can create so many different objects.
Contact : Helene JOISTEN
A recent approach for cancer cells destruction was proposed, based on the triggering of cancer cell spontaneous death through the mechanical vibration of anisotropic magnetic nanoparticles attached to the cells membrane at low frequencies (20Hz) and in weak magnetic fields ( a few mT).
Contact : Ricardo Sousa
During writing of Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM), the torque due to a voltage pulse may be used to help writing.
Contact : Bernard DIENY
Thematic Prize 2015 Adrien Constantin de Magny awarded to Bernard DIENY by the French Sciences Academy Bernard Dieny from INAC/SPINTEC received the thematic Prize « Adrien Constantin de Magny » for his research in nanomagnetism and spin-electronics.
Contact : Mair Chshiev
Abstract The interfacial structures between magnetic/non-magnetic films play a crucial rule in spintronic devices. In particular, Tunneling magneto-resistance (TMR) is extremely sensitive to the band structure of ferromagnet/insulator interfaces.
One solution to meet the new microelectronics and very advanced processes issues is to use Magnetic Tunnel Junctions (MTJ), adding mainly the non-volatility to the integrated circuits. This enables to improve the performance, especially in terms of power consumption and new functionalities.
The maximization of Hex/HC ratio (Hex being the exchange bias field and HC the coercive field) and Hex thermal stability are key aspects to improve the performances of Thermally Assisted Magnetic Random Access Memory (TA-MRAM).
Contact : Claire Baraduc
  Researchers from Spintec wrote the first chapter of a book about magnetoresistive sensors. This book that collects all available knowledge on this subject was awarded a Distinguished Publication Award by the Magnetics Society of Japan.


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