12-10-2018
Contact : Florian VIGNEAU
We report ballistic transport in a one-dimensional (1D) channel made of germanium quantum well and reveal an anisotropic variation of the hole g-factor as a function of the orientation of the magnetic field.
05-06-2018
Contact : Marc Sanquer
Research on silicon-based spin qubits is currently extensively pursued looking for a viable pathway towards large-scale integration.
18-10-2017
Integration of charge sensors for the readout of semiconductor quantum bits (qubits) is required for a realistic realization of scalable quantum computer.
28-06-2017
The development of sensitive and compact readout tools of quantum states is a central issue in the run to industrial scalability of semiconductor quantum bits (qubits).
02-02-2017
Moiré patterns are superlattice structures that appear when two crystals with a lattice mismatch or with a different orientation are superimposed. We have developed a universal classification of all possible periodic Moirés in order to determine their exact crystallographic structure.
30-11-2016
Leti, an institute of CEA Tech, along with Inac, a fundamental research division of CEA, and the University of Grenoble Alpes have achieved the first demonstration of a quantum-dot-based spin qubit using an industry-standard fabrication process.
07-06-2016
Researchers from INAC/PHELIQS (CEA Grenoble) and Kavli Institute of Nanoscience (TU Delft, Netherlands) have predicted the occurrence of topological transitions in multi-terminal Josephson junctions.
19-02-2016
Contact : Romain Maurand
microelectronics industry has shrinked the size of transistors present in our computers and other electronic equipment, arriving to critical sizes on the order of ten nanometers.
10-10-2013
We have modeled for the first time devices developed at LETI and STMicroelectronics with quantum methods. These simulations have provided important information on the physics of these devices.
09-10-2013
Contact : Xavier Jehl
Electron pumps are devices delivering a quantized current when driven at a frequency f: I=Nef, where N is an integer and e the electron charge.

 

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