Contact : Gilles Gaudin
We report on the wave-vector independent detection of short-waved spin waves with wavelengths down to 150 nm by the inverse spin Hall effect in spin-wave waveguides made from CMOS-compatible sputtered Ta/CoFeB/MgO.
Contact : Olivier Klein
We have recently reported that pure spin conductors could behave as nonlinear component in the high power regime, hereby opening up considerably the realm of functions realizable with magnetic materials. An additional feature is that these are continuously tunable by an external magnetic field.
This study discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration.
Contact : Julia Meyer
Researchers from INAC/PHELIQS (CEA Grenoble) established the theory of the critical magnetic field for a novel class of two-dimensional superconductors with strong spin-orbit coupling. These materials have interesting properties for potential applications in spintronics.
Radiation robust circuit design for harsh environments like space is a big challenge for IC design and embedded systems. As circuits become more and more complex and CMOS processes get denser and smaller, their immunity towards particle strikes decreases drastically.
Jean-Pierre Nozières, Spintec researcher in magnetic devices, is one of the winners of the Innovation Medal of the CNRS “cuvee” 2017 at 54 years old.
Contact : Mair CHSHIEV
Advancing spintronic devices requires using novel 2D materials including graphene with featured properties. In particular, a significant effort has been focused on injecting spins and inducing magnetism in graphene giving rise to emerging field of graphene spintronics.
  We have developed arrays of innovative magnetic nanotweezers or “nanojaws” on silicon wafers, by a top-down approach using the fabrication techniques of microelectronics.
Contact : Gilles Gaudin
We have created an analytical model of spin waves in microscopic spin-wave waveguides in the presence of interfacial Dzyaloshinskii-Moriya interaction.
Contact : Bernard Dieny
Magnetic field mapping techniques have continuously been developed due to the necessity for determining the spatial components of local magnetic fields in many industrial applications and fundamental research.
Contact : Bernard Dieny
The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization.
Contact : Vincent Baltz
A fluctuating magnetic order allows more spins to pass through an interface. Bringing a ferromagnetic layer to resonance creates non-equilibrium magnetization dynamics which generates a spin current.
Contact: Ursula EBELS
Spintronic concepts and materials are well known for their applications in data storage, magnetic memory and hybrid logic devices. Besides, they can also bring novel approaches for the realization of microwave components such as rf signal sources or rf detectors.
Magnetic devices made from the same thin film and subjected to the same electric excitation switch opposite to each other due to their different shape. The magic about the art of paper folding is that from the same sheet of paper one can create so many different objects.
Contact : Ricardo Sousa
During writing of Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM), the torque due to a voltage pulse may be used to help writing.
Contact : Helene JOISTEN
A recent approach for cancer cells destruction was proposed, based on the triggering of cancer cell spontaneous death through the mechanical vibration of anisotropic magnetic nanoparticles attached to the cells membrane at low frequencies (20Hz) and in weak magnetic fields ( a few mT).
Contact : Claire Baraduc
  Researchers from Spintec wrote the first chapter of a book about magnetoresistive sensors. This book that collects all available knowledge on this subject was awarded a Distinguished Publication Award by the Magnetics Society of Japan.
Contact : Vincent Baltz
In spintronics, the spin dependent transport properties of ferromagnets (Fs) lie at the heart of devices working principles. Conversely, antiferromagnets (AFs) are so far used for their magnetic properties only.
Contact : Ricardo SOUSA
In order to enhance the tunnel magnetoresistance (TMR) of magnetic tunnel junctions with perpendicular anisotropy the thicknesses of the electrodes on both sides of the MgO barrier have to be optimized.
Contact : Léa Cuchet
Usually, magnetic tunnel junctions consist of electrodes made of an alloy of cobalt, iron and boron (CoFeB) and a tunnel barrier in magnesium oxide (MgO). To bring perpendicular anisotropy to such structures, multilayers of cobalt and platinum (Co/Pt) may be used.
Contact : Vincent Baltz
Spintronics applications use ferromagnetic(F)/antiferromagnetic(AF) exchange bias (EB) interactions to set the reference direction required for the spin of conduction electrons. They therefore may involve layers intermixing originating from F/AF interfaces.
In May, at the "International Memory Workshop" organized by the IEEE in California, Spintec and Crocus Technology presented the first demonstration of magnetic memory cells capable of performing a logic function.


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