Jean-Pierre Nozières, Spintec researcher in magnetic devices, is one of the winners of the Innovation Medal of the CNRS “cuvee” 2017 at 54 years old. Since 2011, this distinction has been awarded for outstanding scientific research leading to a remarkable innovation, whether in ... More »
Contact : Mair CHSHIEV
Advancing spintronic devices requires using novel 2D materials including graphene with featured properties. In particular, a significant effort has been focused on injecting spins and inducing magnetism in graphene giving rise to emerging field of graphene spintronics. It is demonstrated that ... More »
  We have developed arrays of innovative magnetic nanotweezers or “nanojaws” on silicon wafers, by a top-down approach using the fabrication techniques of microelectronics.   The mechanical manipulation of micro- and nanometric objects relies on constantly evolving ... More »
Contact : Gilles Gaudin
We have created an analytical model of spin waves in microscopic spin-wave waveguides in the presence of interfacial Dzyaloshinskii-Moriya interaction. By comparing to micromagnetic simulations, we have demonstrated that spatially periodic excitation sources can be used to create a uni-directional ... More »
Contact : Bernard Dieny
Magnetic field mapping techniques have continuously been developed due to the necessity for determining the spatial components of local magnetic fields in many industrial applications and fundamental research. Several factors are considered for sensors such as spatial resolution, sensitivity, ... More »
Contact : Bernard Dieny
The writing in conventional magnetic memories based on magnetic tunnel junctions (STT-MRAM) is intrinsically stochastic : a large amplitude thermal fluctuation is required to trigger the siwthing of the storage layer magnetization. SPINTEC has shown that this stochasticity can be almost ... More »
Contact : Vincent Baltz
A fluctuating magnetic order allows more spins to pass through an interface. Bringing a ferromagnetic layer to resonance creates non-equilibrium magnetization dynamics which generates a spin current. The spin current propagates from the ferromagnet into a neighboring layer if permitted by the ... More »
Contact: Ursula EBELS
Spintronic concepts and materials are well known for their applications in data storage, magnetic memory and hybrid logic devices. Besides, they can also bring novel approaches for the realization of microwave components such as rf signal sources or rf detectors. These applications are based on the ... More »
Magnetic devices made from the same thin film and subjected to the same electric excitation switch opposite to each other due to their different shape. The magic about the art of paper folding is that from the same sheet of paper one can create so many different objects. Unfortunately, the ... More »
Contact : Ricardo Sousa
During writing of Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM), the torque due to a voltage pulse may be used to help writing. As part of collaboration between Spintec and Crocus Technology, we brought out that most of the influence of the spin transfer torque is exerted ... More »
Contact : Helene JOISTEN
A recent approach for cancer cells destruction was proposed, based on the triggering of cancer cell spontaneous death through the mechanical vibration of anisotropic magnetic nanoparticles attached to the cells membrane at low frequencies (20Hz) and in weak magnetic fields ( a few mT). The ... More »
Contact : Claire Baraduc
  Researchers from Spintec wrote the first chapter of a book about magnetoresistive sensors. This book that collects all available knowledge on this subject was awarded a Distinguished Publication Award by the Magnetics Society of Japan. Since the discovery of the giant ... More »
Contact : Vincent Baltz
In spintronics, the spin dependent transport properties of ferromagnets (Fs) lie at the heart of devices working principles. Conversely, antiferromagnets (AFs) are so far used for their magnetic properties only. However, spin dependent transport with AFs is of high interest: spin absorption lengths ... More »
Contact : Ricardo SOUSA
In order to enhance the tunnel magnetoresistance (TMR) of magnetic tunnel junctions with perpendicular anisotropy the thicknesses of the electrodes on both sides of the MgO barrier have to be optimized. By carefully adjusting the thicknesses of the magnetic layers, taking into account a ... More »
Contact : Léa Cuchet
Usually, magnetic tunnel junctions consist of electrodes made of an alloy of cobalt, iron and boron (CoFeB) and a tunnel barrier in magnesium oxide (MgO). To bring perpendicular anisotropy to such structures, multilayers of cobalt and platinum (Co/Pt) may be used. However, it is necessary to ... More »
Contact : Vincent Baltz
Spintronics applications use ferromagnetic(F)/antiferromagnetic(AF) exchange bias (EB) interactions to set the reference direction required for the spin of conduction electrons. They therefore may involve layers intermixing originating from F/AF interfaces. As a consequence of intermixing, ... More »
In May, at the "International Memory Workshop" organized by the IEEE in California, Spintec and Crocus Technology presented the first demonstration of magnetic memory cells capable of performing a logic function. This patented concept opens the possibility to perform functions related to ... More »
Contact : Ursula Ebels
The topical group “Magnetism and its applications” (GMAG) from the American Physical Society (APS) presents an award to three PhD students every year during the APS March meeting for their outstanding dissertation, highlighting the quality and independence of the student’s ... More »
Spintec Laboratory, in collaboration with the Circuits Multi-Projects service, the Laboratory of Informatics, Robotics and Microelectronics of Montpellier and the Fundamental Electronics Institute, has developed a set of software tools to evaluate the gains that can be expected by introducing ... More »


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