Post-Doctoral Fellow (m/f) for the upgrade of the In Situ Nanostructures instrument
27/09/2013
Post-Doctoral Fellow (m/f) for the upgrade of the In Situ Nanostructures instrument
The INS (In situ Nanostructure on Surfaces) instrument of the BM32 beamline at the ESRF is devoted to in situ studies of the structure and morphology of semiconductor, metal and oxide nanostructures, surfaces and interfaces during processes. It uses hard x-rays to follow fundamental aspects of epitaxial growth employing grazing incidence small angle x-ray scattering and grazing incidence diffraction in situ. Its highly versatile growth chamber can be equipped with several solid source evaporators for molecular beam epitaxy (MBE), as well as with gas sources for UHV Chemical Vapor Deposition (CVD) catalytic growth of nanowires.
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Carbon nanomembranes handling and HF characterization for MEMS
20/09/2013
Carbon nanomembranes handling and HF characterization for MEMS
A Post doctoral position is available for the experimental measurement of resonance frequency of micrometer sized nanomembranes of DLC. The research will take place at CEA-LETI, Minatec Campus and at INAC institute, Grenoble, France. For more details, please have a look to the attached announcement. annonce_post_doc.pdf (160 Ko)   Anne Ghis DSIS/SCSE CEA-Leti MINATEC Campus, 17 rue des Martyrs 38054 GRENOBLE Cedex 9 anne.ghis@cea.fr Tél. : + 33 (0)4 38 78 42 57 – www.leti.fr  

6 Excellence Research Fellowships for Energy and Information Technologies in Grenoble and Paris-Saclay
02/08/2013
6 Excellence Research Fellowships for Energy and Information Technologies in Grenoble and Paris-Saclay
The Division of Technological Research and the Division of Physical Science of CEA are preeminent players in the European Research Area for renewable energies and information technologies. In order to sustain its new FlagShip Program in these areas, CEA invites applications for 6 Excellence Research Fellowships on Nano Electronics and Photonics, Renewable Energies and Advanced functional materials. This program will provide collaborative working with renowned staff and research opportunities in state of the art facilities for senior scientists strongly motivated by working at the forefront research in any of the following topics: Ultimate microelectronic- project leaders:  Dr. S. Deleonibus and  Dr. M.
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15 Postdoctoral Fellowships for Energy and Information Technologies in Grenoble and Paris-Saclay
02/08/2013
15 Postdoctoral Fellowships for Energy and Information Technologies in Grenoble and Paris-Saclay
The Division of Technological Research and the Division of Physical Science of CEA are preeminent players in the European Research Area for renewable energies and information technologies. In order to sustain its new FlagShip Program in these areas, CEA invites applications for 15 two years postdoctoral fellowships on Nano Electronics and Photonics, Renewable Energies and Advanced functional materials. This program will provide interdisciplinary training with renowned supporting staff and research opportunities in state of the art facilities for excellent young scientists strongly motivated by working at the forefront research in any of the following topics: Ultimate microelectronic- project leaders:  Dr. S.
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Post-doc: Nanomagnetism and Spintronics with Semiconductors
02/08/2013
Post-doc: Nanomagnetism and Spintronics with Semiconductors
Research project: Spin pumping and spin-orbit effects in SiGe-based heterostructures contact: matthieu.jamet@cea.fr The Nanostructures and Magnetism laboratory has recently developed a strong research activity in semiconductor spintronics and more particularly in group IV semiconductors like silicon and germanium. In this context, this post-doc position will be dedicated to the creation of a sizeable electron spin population into Si and Ge by spin pumping and the detection of this spin accumulation by spin-orbit based effects. MOOREA_proposal.docx (18 Ko)

PostDoc Position in Graphene technology
10/07/2013
PostDoc Position in Graphene technology
Graphene is currently receiving considerable interest as it has lead to important scientific achievements and because it is promising for applications in several fields such as RF electronics, spintronics or chemical sensing. Despite considerable improvements, it is still not clear what will be the best method to produce graphene and which is the most appropriate substrate. The choice of the method will certainly depend on the application. In this context the advantages of graphene grown on silicon carbide are the large surfaces which can be covered and the high mobility that can be achieved. The main draw back of this technique is that no back-gating is readily possible contrary to graphene transfered on SiO2.
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Post-Doc positions available at CEA Grenoble on DNA based-Nanotechnologies
26/06/2013
Post-Doc positions available at CEA Grenoble on DNA based-Nanotechnologies
CEA is launching in 2013 a transversal project from fundamental research to technology entitled “3D bio-inspired Nano-scale Assembly (3DNA)”. This project aims at creating a synergy between researchers and technologists in order to develop a specific toolbox thanks to the auto-assembly properties of DNA and proteins. For the first year, several postdoctoral positions are opened in the research fields related to modified DNA synthesis and functionalization, DNA & proteins architectures preparation (DNA origami, protein crystallization,...), advanced spectroscopy & lithography with these bio-bricks and 2D/3D interconnections.
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PostDoc Position in Graphene technology
24/06/2013
PostDoc Position in Graphene technology
Graphene is currently receiving considerable interest as it has lead to important scientific achievements and because it is promising for applications in several fields such as RF electronics, spintronics or chemical sensing. Despite considerable improvements, it is still not clear what will be the best method to produce graphene and which is the most appropriate substrate. The choice of the method will certainly depend on the application. In this context the advantages of graphene grown on silicon carbide are the large surfaces which can be covered and the high mobility that can be achieved. The main draw back of this technique is that no back-gating is readily possible contrary to graphene transfered on SiO2.
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Business development engineer at LANEF
27/05/2013
Business development engineer at LANEF
One year full-time UJF contract – renewable over 2 additional years. Remuneration at academic engineer level, in accordance with the candidate’s profile and previous experience. Deadline for application (CV + cover letter + references): June 16, 2013 All details on the web page or on Business_Development_Engineer_LANEF.pdf (233 Ko)

 

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