2 years postdoc position opening at SPINTEC in the framework of the H2020 EU FET-OPEN SPICE (2017-2020) project on "Development of optically sensitive storage layer materials to be integrated in magnetic tunnel junctions"
Spin Transfer Torque Random Access Memories (STT-RAM) are focusing an increasing interest in microelectronics industry due to their non-volatility, speed, density, downsize scalability to below 20nm nodes, infinite endurance plus radiation hardness. Major microelectronics companies are aiming at DRAM replacement by STTRAM below the 20nm technology node. An interesting trend that improves the write speed and power of such spintronic memory is the discovery of magnetization reversal by femtosecond laser pulses in thin ferromagnetic Gd/Fe/Co films. Recent results show that a wide class of magnetic materials can be switched in this way.