The INS (In situ Nanostructure on Surfaces) instrument of the BM32 beamline at the ESRF is devoted to in situ studies of the structure and morphology of semiconductor, metal and oxide nanostructures, surfaces and interfaces during processes. It uses hard x-rays to follow fundamental aspects of epitaxial growth employing grazing incidence small angle x-ray scattering and grazing incidence diffraction in situ. Its highly versatile growth chamber can be equipped with several solid source evaporators for molecular beam epitaxy (MBE), as well as with gas sources for UHV Chemical Vapor Deposition (CVD) catalytic growth of nanowires. Within the French “Investissement d’Avenir” projects, an “Excellence Equipment” project has been allocated to upgrade the INS instrument.
Full proposal : PostDoc_BM32_EquipEX.pdf (203 Ko)
This is an 18 months contract. Only candidates holding a Ph.D. obtained less than 2 years ago are eligible for Post-doctoral positions.
If you are interested, please, send a CV and motivation letter to Gilles Renaud (tel.: +33 (0)4 38 78 35 58 or (0)6 07 47 07 14 or (0)4 76 88 24 20, email: firstname.lastname@example.org or email@example.com).
Deadline for application: 15/11/2013.
G. Renaud, 2013-09-27